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Hunan Jingtan Automation Equipment Co., LTD.
Hunan Jingtan Automation Equipment Co., LTD.
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Graphitization Furnace with 375L Loading Capacity 500x500x1500 Chamber Size and ±5℃ Temperature Uniformity for Semiconductor Purification

Détails du produit

Lieu d'origine: Hunan, Chine

Nom de marque: Jingtan

Conditions de paiement et d'expédition

Quantité de commande min: 1

Prix: $56,000

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Les spécifications
Mettre en évidence:

375L Loading Capacity Graphitization Furnace

,

500x500x1500 Chamber Size Purification Furnace

,

±5℃ Temperature Uniformity Vacuum Sintering Machine

Taper:
Four à induction
Tension:
380
Poids:
5 T
Température limite:
2400℃
Méthode de chauffage:
Résistance à la chauffage des tiges de graphite
Modèle de contrôle:
Manuel ou automatique
Ambiance de travail:
Protection contre le vide ou les gaz inertes
Capacité de chargement:
375L
Taille de chambre:
500*500*1500
Uniformité de la température:
± 5°C
Structure de four:
horizontal
Matériau du corps du four:
SS 304
ZONE HAUTE TEMPÉRATURE:
500*500*1500
Différence de température:
± 5°C
Composants de base:
PLC, récipient sous pression, pompe, cylindre
Taper:
Four à induction
Tension:
380
Poids:
5 T
Température limite:
2400℃
Méthode de chauffage:
Résistance à la chauffage des tiges de graphite
Modèle de contrôle:
Manuel ou automatique
Ambiance de travail:
Protection contre le vide ou les gaz inertes
Capacité de chargement:
375L
Taille de chambre:
500*500*1500
Uniformité de la température:
± 5°C
Structure de four:
horizontal
Matériau du corps du four:
SS 304
ZONE HAUTE TEMPÉRATURE:
500*500*1500
Différence de température:
± 5°C
Composants de base:
PLC, récipient sous pression, pompe, cylindre
Définition
Graphitization Furnace with 375L Loading Capacity 500x500x1500 Chamber Size and ±5℃ Temperature Uniformity for Semiconductor Purification
Semiconductor Purification With Combination of Chemical and High Temperature Method Vacuum Sintering Heating Machine
Graphitization Furnace with 375L Loading Capacity 500x500x1500 Chamber Size and ±5℃ Temperature Uniformity for Semiconductor Purification 0 Graphitization Furnace with 375L Loading Capacity 500x500x1500 Chamber Size and ±5℃ Temperature Uniformity for Semiconductor Purification 1
Carbon Nanotube Purification Furnace

The combined purification treatment of high temperature method and chemical method. Suitable for new energy vehicles, semiconductors, new materials and many other fields.

Graphitization Furnace with 375L Loading Capacity 500x500x1500 Chamber Size and ±5℃ Temperature Uniformity for Semiconductor Purification 2 Graphitization Furnace with 375L Loading Capacity 500x500x1500 Chamber Size and ±5℃ Temperature Uniformity for Semiconductor Purification 3

Heat treatment of battery anode materials, powder metallurgy, nanomaterials, graphene, new materials and powder materials in vacuum atmosphere, and high temperature sintering and purification in an inert atmosphere.

Model TCL-45 TCL-128 TCL-375 TCL-720 TCL-1568 TCL-2560 TCL-5000 TCL-7200 TCL-11700
High Temperature Zone (mm) 300*300*500 400*400*800 500*500*1500 600*600*2000 700*700*3200 800*800*4000 1000*1000*5000 1200*1200*5000 1500*1500*5200
Loading Capacity 45 128 375 720 1568 2560 5000 7200 11700
Temperature Difference ±5 ±10 ±15
Limit Temperature 2400
Heating Mode resistance graphite rod heating
Control Model manual or automatic operation
Working Atmosphere in the Furnace vacuum or inert gas protection (micro positive pressure)
Graphitization Furnace with 375L Loading Capacity 500x500x1500 Chamber Size and ±5℃ Temperature Uniformity for Semiconductor Purification 4 Graphitization Furnace with 375L Loading Capacity 500x500x1500 Chamber Size and ±5℃ Temperature Uniformity for Semiconductor Purification 5
  • It can be used for high temperature graphitization purification of carbon nanotube materials, and can realize the purification treatment of high temperature method combined with chemical method.
  • It can realize continuous feeding and discharging at high temperature, reducing energy consumption and shortening production cycle.
  • Use resistance or induction heating, the temperature can reach 2400℃.
  • The combination of high temperature method and chemical method can meet the requirements of high purity treatment.
  • The efficient filtration system can effectively capture the dust and corrosive gases produced in the purification process.
  • It can realize continuous feeding and discharging at high temperature, reducing energy consumption and shortening production cycle.
Frequently Asked Questions
Are you a factory or trading company?
Yes, we are China leading high-temperature vacuum furnace manufacturer with 14+ years experience, granted with many patent certifications in the domestic market.
Do you have customization or OEM service?
Yes, we have powerful R&D team and high-tech equipment. We can supply both regular models and customizable furnaces according to client requirements.
What's your advantages?
  • Quick response to your enquiry
  • High quality control
  • Stable supply chain in the domestic market
  • Timely delivery
  • Excellent after-sales service, including engineer dispatch for installation and debugging
Contact Information
Graphitization Furnace with 375L Loading Capacity 500x500x1500 Chamber Size and ±5℃ Temperature Uniformity for Semiconductor Purification 6 Graphitization Furnace with 375L Loading Capacity 500x500x1500 Chamber Size and ±5℃ Temperature Uniformity for Semiconductor Purification 7
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